simple drive requirement bv dss -30v small package outline r ds(on) 80m surface mount device i d - 3.2a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-amb thermal resistance junction-ambient 3 max. 90 /w -55 to 150 linear derating factor thermal data parameter total power dissipation operating junction temperature range storage temperature range 1.38 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current 3 continuous drain current 3 -2.6 pulsed drain current 1,2 -10 AP2305AN rating - 30 12 -3.2 0.01 the advanced power mosfets from ty provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. the sot-23 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s d g s sot-23 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
AP2305AN electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.1 -v/ r ds(on) static drain-source on-resistance v gs =-10v, i d =-3.2a - - 60 m v gs =-4.5v, i d =-3.0a - - 80 m v gs =-2.5v, i d =-2.0a - - 150 m v gs =-1.8v, i d =-1.0a - - 250 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - -1.2 v g fs forward transconductance v ds =-5v, i d =-3.0a - 9 - s i dss drain-source leakage current (t j =25 o c) v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =-3.2a - 10 18 nc q gs gate-source charge v ds =-24v - 1.8 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3.6 - nc t d(on) turn-on delay time 2 v ds =-15v - 7 - ns t r rise time i d =-3.2a - 15 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 21 - ns t f fall time r d =4.6 -15- ns c iss input capacitance v gs =0v - 735 1325 pf c oss output capacitance v ds =-25v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 80 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v trr reverse recovery time i s =-3.2a, v gs =0v, - 24 - ns qrr reverse recovery charge di/dt=100a/s - 19 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 270 /w when mounted on min. copper pad. 12v 100 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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